Flexible Crystalline b-Ga2O3 Solar-blind Photodetectors

1/1/2020 | Peihong Zhang

Wide bandgap (WBG) semiconductor-based solar-blind photodetectors (PDs) have attracted considerable attention as an emerging technology due to their unique spectral working region, which covers the deep ultra-violet (UV), and significant potential in many applications, such as secure data communication.

Metal-Organic Chemical Vapor Deposition of ZnGeGa2N4

11/27/2019 | B. H. D. Jayatunga, M. R. Karim, R. A. Lalk, O. Ohanaka, W. R. L. Lambrecht, H. P. Zhao, K. Kash

Band Alignment of III-N, ZnO and II-IV-N2 Semiconductors from the Electron Affinity Rule

10/18/2019 | S. Lyu, W. R. L. Lambrecht

First-principles Calculations of Phonon Derived Raman and Infrared Spectra in Be-IV-N2 Compounds

7/19/2019 | S. Lyu, Y. H. Liu, W. R. L. Lambrecht

Metal-Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire

7/3/2019 | M. R. Karim, B. H. D. Jayatunga, Z. X. Feng, K. Kash, H. P. Zhao

Quasiparticle Self-consistent GW Electronic Band Structures of Be-IV-N2 Compounds

6/3/2019 | S. Lyu, W. R. L. Lambrecht

Stability of Excitons at Room Temperature in GaN Quantum Wells

5/1/2019 | D. Bayerl and E. Kioupakis

The effects of extreme confinement on the electronic, excitonic, and radiative properties of atomically thin GaN quantum wells were studied through use of first-principles calculations

Super-slick Coatings: Data Driven Design to Application

4/11/2019 | Sarbajit Banerjee

(Top left) Slices of a machine learning model designed to capture self-assembly of molecular monolayers on perovskite surfaces. (Top right) Photograph of a superslick surface comprising ZnO tetrapods functionalized with a molecular monolayer. (Lower) Lacy Douglas, Bill Tolar, Erick Braham, and Sarbajit Banerjee at I-corps Kick-off in Chicago.

Achieving a New Generation of 3D Nanostructures in Organic Electronics

4/1/2019 | L. L. Lv, J. Roberts, C. Y. Xiao, Z. M. Jia, W. Jiang, G. W. Zhang, C. Risko, and L. Zhang

Rigid 3D polycyclic aromatic hydrocarbons (PAHs) have garnered interest due to their potential use in semiconductor applications and as models to study through-bond and through-space electronic interactions.

Band Gaps, Band-Offsets, Disorder, Stability Region, and Point Defects in II-IV-N-2 Semiconductors

3/26/2019 | S. Lyu, D. Skachkov, K. Kash, E. W. Blanton, W. R. L. Lambrecht