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Design of InGaN-ZnSnN2 Quantum Wells for High-efficiency Amber Light Emitting Diodes
Jul 20, 2018
Publication
10.1063/1.5036949
Authors
M. R. Karim, H. P. Zha
Related Project
Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures