Designing Materials to Revolutionize Our Engineering FutureIntellectual MeritCombining Experiment and Computation to Control Doping in Thermoelectric Materials
Jan 15, 2021
The transformation from Hg2GeTe4 to Cu2HgGeTe4 was studied through defect calculations and resonant X-ray diffraction; these efforts identified the presence of local ordering of defects along the alloy continuum and the impact of this local ordering on the carrier concentration and dopability.
